Use of SIMS to Determine Pure and Oxidized Elements in a Solid Surface

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概要

• 論文の詳細を見る

• A quantitative analysis of oxidized elements in a solid surface which consists of and oxidized element has been studied using a SIMS equipped with a quadrupole mass filter. The apparatus is able to introduce gas into the specimen chamber in amounts high as 1×10<SUP>-3</SUP> Torr without any problems for the primary beam system and the analyzer system by means of differential pumping techniques. The standard sample(Al, Si)composed of a pure and oxidized element is prepared by the method used for fabricating microelectronic devices. Ions such as Al<SUP>+</SUP>and Si<SUP>+</SUP>emitted from standard samples are represented by the linear superposition of ions emitted from the pure and oxidized element. The concentration of the oxidized element is determined by the ratio of the secondary ion intensity on exposure to oxygen to that on non-exposure to oxygen.

• 日本質量分析学会の論文

著者

• Yoshioka Yoshiaki

  Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.

• Kusao Kenji

  Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.

• Konishi Fumiya

  Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.

関連論文

• Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
• Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
• Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
• Use of SIMS to Determine Pure and Oxidized Elements in a Solid Surface

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