Intrinsic quantum efficiencies of semiconductor photoelectrodes obtained by temperature measurement.
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概要
- 論文の詳細を見る
Quantum efficiencies of photoelectrochemical reactions on n-type and p-type semiconductor electrodes can easily be determined by the measurement of temperature changes of the surface of semiconductor electrodes by use of thermistors. The quantum efficiencies are intrinsic, since only the absorbed light quanta contribute to temperature change. The merits of the method, simplicity and applicability to the semiconductor of large surface reflectance, are discussed. The intrinsic quantum efficiencies were compared with those obtained by the usual chemical actinometric method.
- 公益社団法人 日本化学会の論文
著者
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Honda Kenichi
Department Of Synthetic Chemistry Faculty Of Engineering The University Of Tokyo
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Fujishima Akira
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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MAEDA Yasuhisa
Department of Materials Science and Engineering, Faculty of Engineering, Shizuoka University
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Maeda Yasuhisa
Department of Synthetic Chemistry, Faculty of Engineering, The University of Tokyo
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HONDA Kenichi
Department of Synthetic Chemistry
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