The determination of the "flat-band" potential of nitrogen-stabilized n-TiO2 photoanode.
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概要
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The differential capacitance (<I>C</I>) and the photocurrent onset voltage (<I>E</I><SUB>p</SUB>) of nitrogen-stabilized n-TiO<SUB>2</SUB> semiconductor electrodes were measured in buffered Na<SUB>3</SUB>PO<SUB>4</SUB> solutions. The <I>C</I><SUP>−2</SUP> <I>vs.</I> <I>E</I> plots did not show the Mott-Schottky (MS) behavior. In order to explain the nonlinearity in MS plots, the distribution in donor density (<I>N</I><SUB>d</SUB>) at the solid side and the contribution of the electrical double layer at the solution side to the total capacitance were considered. The characterized flat-band potential (<I>E</I><SUB>fb</SUB>) and the zero-charge potential (<I>E</I><SUB>zc</SUB>) were defined from the derived equations. The roles of the defined <I>E</I><SUB>fb</SUB> and <I>E</I><SUB>zc</SUB> in the photocurrent onset voltage (<I>E</I><SUB>p</SUB>) were also considered, and the reason why <I>E</I><SUB>p</SUB> differed from <I>E</I><SUB>fb</SUB> was explained using the "Gate" model.
- 公益社団法人 日本化学会の論文
著者
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Ohzuku Tsutomu
Department Of Applied Chemistry Graduate School Of Engineering Osaka City University (ocu)
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Tari Isao
Department Of Applied Chemistry Faculty Of Engineering Okayama University
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Hirai Taketsugu
Department of Applied Chemistry, Faculty of Engineering, Osaka City University
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