Depletion-mode field effect semiconductor sensor with cation-sensitive polymer membranes.
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概要
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Semiconductor ion sensors based on the surface conductance change due to a variation in the depletion layer thickness have been constructed. An n-SnO<SUB>2</SUB> electrode was coupled with four kinds of cation-sensitive polymer membranes (Fe<SUP>3+</SUP>- and Cu<SUP>2+</SUP>-exchanged Nafion membranes and poly(vinyl chloride)-supported dioctyl phthalate membranes containing a neutral carrier, valinomycin or nonactin), and its surface conductance was measured under depletion conditions as a function of the cation concentration. The sensor exhibited sensitivity to Fe<SUP>3+</SUP>, Cu<SUP>2+</SUP>, K<SUP>+</SUP>, or NH<SUB>4</SUB><SUP>+</SUP> at levels higher than 10<SUP>−4</SUP> mol dm<SUP>−3</SUP> within 10 s. The sensor response was analyzed in terms of (1) the dependence of the surface conductance on the surface band bending and (2) the potential difference at solution/membrane interfaces. From the analysis, it is confirmed that the membranes show nearly Nernstian behavior and that the semiconductor acts as a potentiometric transducer. The applicability of the depletion-mode semiconductor sensor is discussed.
- 公益社団法人 日本化学会の論文
著者
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Watanabe Tadashi
Institute Of Industrial Science The University Of Tokyo
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Yoshida Shoichiro
Institute Of Industrial Science The University Of Tokyo
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Sukigara Mitsunori
Institute of Industrial Science, The University of Tokyo
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Okawa Yusuke
Institute of Industrial Science, The University of Tokyo
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