Pressure Dependence of Photoluminescence in GaInP Grown by Metalorganic Vapor Phase Epitaxy.

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概要

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• High-pressure photoluminescence (PL) studies of ordered Ga<SUB>0. 5</SUB>In<SUB>0. 5</SUB>P alloys grown on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) are reviewed. The anomalous reduction in the direct band-gap energy and the high-pressure PL behavior depend on growth temperature and substrate misorientation. The possible explanations for some of the trends and the complexities involved in PL properties in ordered GaInP samples are presented, which include effects of repulsion between theΓ-folded energy states in the CuPt-type ordered structure.

• 日本高圧力学会の論文

著者

• 小林 利彦

  神戸大学工学部

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