高圧力下のIII-V族化合物半導体の電気特性と光学特性(<小特集>高圧力小特集)

概要

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The high electric field properties of InP have been studied as a function of pressure to 55 kbar. The measured threshold field for transferred electron instability showed an initial increase with pressure, and after passing through a maximum at 30-33 kbar it decreased gradually. Monte Carlo calculations base on a stronger Γ-L scattering assumption seemed to agree better with the experimental data. The experimental results also indicated that a change from the two- to the three-level operation occurred near 30-33 kbar. Photoluminescence (PL) and optical absorption measurements on the heavily doped GaAs have been made as a function of pressure to 60 kbar at 77 K. With increasing pressure the spectrum shifted towards the higher energy side. The pressure dependence of the emission peak across the direct gap showed a noticeable change in slope at about 30 kbar. For pressures above 35 kbar the PL intensity suddenly decreased. The pressure dependence of the absorption edge in the heavily doped samples was quite different from that in the undoped or moderately doped samples. The observed behavior can be explained in terms of the effect of high doping on the inversion of the Γ and X conduction bands at high pressure
社団法人日本材料学会の論文
1988-02-15