RuO2-SiO2スパッタ膜の電気的性質

概要

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RuO2-SiO2 films about 0.3-0.4μm thick were prepared from a RuO2-SiO2 composite target by RF sputtering in an argon atmosphere, and their crystal structure and electrical properties were investigated. The crystallinity of the sputtered RuO2-SiO2 films was found to depend on the volume fraction, x, of SiO2 and on the sputtering power density. Film crystallinity decreased with an increase in x and with a decrease in sputtering power density. The electrical resistivity of the sputtered RuO2-SiO2 films varied with x over a wide range and was divided into three regions: low (x<0.4), transitional (0.4<x<0.6) and high (x>0.6). The temperature dependence of resistivity was also measured for specimens in the low resistivity region. It was found that the TCR of films prepared at low power densities was negative, while for films prepared at high power densities TCR was positive. These results can be explained by a model in which the sputtered RuO2-SiO2 films consist of micro-crystalline RuO2 grains, amorphous RuO2 and amorphous SiO2. The amorphous RuO2 is considered to have a negative TCR.