Si結晶中の加工歪みとデバイス特性

概要

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The relation between the defects in the abraded layers resulting from the grinding, lapping and polishing of Si wafers and the break down phenomena of devices were investigated. The poly crystalline layer, mosaic layer, and crack layer defects caused by grinding had a strong influence on break down voltage. Moreover the presence of dislocations in these layers, induced by lapping, also caused soft break down phenomena. The layers treated by polishing, however did not influence device break down characteristics.
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