擬コッセル線による結晶方位の決定法

概要

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The diffraction patterns obtained by the back reflection divergent X-ray method are analogous to the well known Kossel patterns, in which each ellipse consisting of Kα1 and Kα2 lines corresponds to the definite set of (hkl) planes. Crystallographic orientation may be determined rapidly and exactly with these pseudo Kossel patterns compared with the ordinary X-ray technique. The diffraction line is indexed by measuring the following Parameters; (1) the distance between the doublet on the film and the two consecutive film positions in the multiple exposure technique; (2) the length of the major or the minor axis in an ellipse and the specimen-to-target and the targetto-film distances. The crystallographic orientation of a specimen can be determined to an accuracy of the order of 0.01° by measuring the parameters of more than two sets of (hkl) planes.
社団法人日本材料学会の論文