スパッタリング法によるSrTiO<SUB>3</SUB>膜の生成と電気特性
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概要
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Formation condition and electrical properties of sputtered SrTiO<SUB>3</SUB> insulator films for electroluminesent devices (ELD) were investigated.<BR>It was found that high substrate temperature and Ar+He+O<SUB>2</SUB> mixed sputtering gas are suitable to obtain high breakdown voltage and large dielectric constant of SrTiO<SUB>3</SUB> films. The breakdown voltage was found to be enhanced in (111) -oriented films as well as films in with a high ion intensity ratio of Sr/Sr+Ti.
- 日本真空協会の論文