高周波化成スパッタリングによるA1N薄膜の作製ならびにその性質について

概要

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Thin films of various composition, AlNX, have been prepared by reactive r. f sputtering using Davides type electrode. Specimens of a series of composition, x=01.0, could be obtained by changing the nitrogen partial pressure with sputtering voltage. Film composition was determined by means of an X-ray microanalyser. The resistivity and the temperature coefficient of resistance, T. C. R., were observed as functions of x for the low composition films, x = 00.7. Dielectric characteristics and optical absorption spectra in both visible and infrared regions were observed for colourless and transparent AlN dielectric films. Dielectric constant (ε/ε0) of 8.08.5 and dissipation factor (tanδ) of 5× 10-3 at 1 kHz were relatively coincident with other data. Structure of films were observed by an electron transmission diffraction pattern, which exhibited hexagonal wurtzite structure. Suitability of this method for the preparation of dielectic films for electronic devices was discussed.
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