高周波スパッタ法によるタンタル薄膜

概要

論文の詳細を見る
The technology of making tantalum resistors is complicated, owing to the fact that tantalum films have three structures which are α-tantalum and β-tantalum and low density structure. The α-tantalum structure has the conventional b. c. c. structure corresponding to the bulk. The β-tantalum is told to show the tetragonal structure. In this paper, tantalum films are found to be produced in the R. F. sputtering system with typical background pressure of 3×10-6 Torr before introducing of Argon gas. In R. F. sputtering, β-tantalum tended to be obtained when sputtering was performed at high pressure of the order of 5×10-3 Torr. The R. F. sputtered tantalum films, α-structure are obtained less than the pressure of 5×10-3 Torr, and mixture of α- and β- structures are obtained between 6×10-3 Torr and 8×10-3 Torr. Above 8×10-3 Torr, complete β-structures in the film are found.
日本真空協会の論文