後方散乱法を用いたマイクロアナリシス

概要

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A new microanalysis using backscattering method was applied to measure lateral distributions as well as depth distributions of impurities in semiconductors. High energy He+-beam from the Van de Graaff accelerator could be squeezed to 70500μmφ on the target by means of the quadrupole magnetic lens and slits system. The lateral distributions of impurities in semiconductors were measured by step scanning i.e, by using a goniometer which slides the targets along the direction perpendicular to the beam line with a minimum step of 10μm. The microanalysis was applied to measure the lateral and depth distributions of Au atoms at GaAs crystal surface sintered in the nitrogen atmosphere after Au evaporation to GaAs crystal surface. It was found that the lateral distributions were not uniform either on the surface or in the bulk. Au atoms were diffused abnormally to the deep region in GaAs crystals, and the concentration profiles of Au were not fitted to complementary error functions. Also presented are the measured results of distributions of Sn doped into Si by means of two different techniques, i.e, doped oxide method and CZ pulling method.
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