マグネトロンスパッタリングによるSnO<SUB>2</SUB>膜
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概要
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RF planar magnetron sputtering apparatus has been used to prepare transparent conductive SnO<SUB>2</SUB> films on glass, using Sb-doped SnO<SUB>2</SUB> targets. The deposition rate, electrical properties, optical properties, and crystal structures (by X-ray diffraction) of the films have been investigated in relation to various sputtering conditions. By this technique, much higher deposition rate (above 1000 Å/min.) than those reported in the past has been achieved, satisfying both low electrical resistivity (2-3×10<SUP>-3</SUP> Ωcm) and high visible transmission (80-90%). The highly oriented (101) SnO<SUB>2</SUB> films previously not reported have shown the lowest electrical resistivity. In order to obtain such high conductive SnO<SUB>2</SUB> films at higher rates, it is required to find an optimum oxygen partial pressure, depending upon the deposition rate.
- 日本真空協会の論文