イオンドーピングを併用したSi分子線エピタキシャル成長

概要

論文の詳細を見る
Crystalline quality and dopant control in Si films produced by molecular beam epitaxy with Sb ion doping have been investigated. Stacking fault and dislocation densities decrease with increase in preheating temperature, preheating time, and growth temperature. Major source of the stacking fault and dislocation is both an unevaporated SiO2 on the substrate surface. Stacking fault-free and dislocation-free epitaxial Si films have been grown at the growth temperature of 860 °C on (100) substrate preheated at 1210°C for more than 10 min. Ion doping can control the doping level in the Si films over the range 10151020 cm-3. Arbitrary doping profiles can be produced in the Si films by means of ion doping. All of the Sb atoms doped in the films are electrically active.
日本真空協会の論文