Inフリー基板マウント法MBEによる半導体レーザの開発
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概要
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GaAs and AlGaAs films were grown by Molecular Beam Epitaxy (MBE) using direct substrate heating instead of conventional In-bonding method. The substrate with IR-absorbing layer was mounted on a hole in a molybdenum-block and heated dilectly by flat heater.<BR>Using this method, self-aligned AlGaAs double-heterostructure lasers were fabricated.<BR>The threshold current of this laser was 40 mA in CW operation at room temperature. The emission wavelength was 780 nm and a fundamental transverse mode oscillation was obtained.