傾斜組成制御によるc-BN薄膜付着力の向上

概要

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The authors have investigated that a cubic boron nitride (c-BN) film with stoichiometric composition can be synthesized on a Si wafer by the use of hot cathode plasma discharged within a parallel magnetic field in an activated reactive evaporation process. The c-BN film prepared by this method, however, initially did not show good adhesion because of the internal stress within the film. Thus, in an effort to obtain good adhesion of the film, the effect of gradual control in N content across the film thickness on the adhesion was examined in expectation that the internal stress can be reduced. The results show that it is possible to deposit, with good adhesion, a c-BN film onto a Si wafer by providing a multilayer film structure, i.e., the one comprising a thin B layer, a gradually controlled BN one and a c-BN one.
社団法人粉体粉末冶金協会の論文