電子ビームによる大面積シリコン薄膜再結晶化技術
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概要
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Recent progress of SOI growth by electron beam recrystallization is described. Emphasis was placed on pseudo-line electron beam (PLEB) technique with lateral seeded epitaxy.<BR>Through computer simulation of the temperature distribution of the sample during electron beam irradiation, amplitude modulation of a high frequency oscillation wave is proved to be useful for obtaining large area SOI.<BR>Agglomeration of SOI near seed region can be suppressed by using a seed structure with tape-red edge and narrow seed width of 2 μm, which leads to realization of single crystalline SOI with well controlled crystallographic orientation. A large area SOI growth, 4 mm_??_, is successfully carried out. [J. Cryst. Soc. Jpn. <B>28</B>, <I>83</I> (1986) ] .
- 日本結晶学会の論文