SiとGaAs
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概要
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The paper highlights current understanding in defects and defect processes in Si and GaAs. How oxygen in Si and point defects in GaAs lead to a defect formation is described. It is emphasized that defects are no longer entities merely to be avoided, but sensitive probes of undetectable defects and defect processes. Further technological demands for higher levels of sophistication must join with the improvements in characterization methods. [J. Cryst. Soc. Jpn. <B>28</B>, <I>61</I> (1986) ] .
- 日本結晶学会の論文