半導体レーザーと結晶 : ―ヘテロ接合構造の進歩―

スポンサーリンク

概要

• 論文の詳細を見る

• Hetero-structures with clean interfaces have been required to obtain low thresholds in semicondutor lasers. Conditions for cl can interfaces of the hetero-structures and their fabrication methods will be described. Today hetero-structures with different bandgaps can be obtained with a variety of semiconductor crystals, which utilize combinations of seeral elements. The concept of the hetero-structure will be expanded not only in opto-electronic but also for electron transport deuices.

• 日本結晶学会の論文

著者

• 林 厳雄

  日本電気 (株) 研究開発グループ

関連論文

• 半導体レーザーと結晶 : ―ヘテロ接合構造の進歩―

スポンサーリンク