Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

スポンサーリンク

概要

• 論文の詳細を見る

• In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5mW to 6.4mW at bias current of 9mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work.

著者

• Marjani Azam

  Department of Chemistry, Arak Branch, Islamic Azad University

• Faez Rahim

  Department of Electrical Engineering, Sharif University of Technology

• Marjani Saeid

  Department of Electrical Engineering, Arak Branch, Islamic Azad University

関連論文

• A small signal circuit model of two mode InAs/GaAs quantum dot laser
• Design and simulation of a high power single mode 1550nm InGaAsP VCSELs
• Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

スポンサーリンク