Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

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概要

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• InAlAs/InGaAs/InP high electron mobility transistors have higher mobility comparing to structures without indium. But existence of indium causes smaller Eg and as a result smaller breakdown voltage. However, increasing percentage of indium results in higher mobility and as a result higher current and transconductance. Therefore decreasing percentage of indium causes higher breakdown voltage at the sometime lower transconductance. One of the most important parameters that limit maximum output power of transistor is breakdown voltage. In this paper, InAlAs/InGaAs/InP HEMTs with different structures are simulated and a structure with a good transconductance and breakdown voltage is introduced.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Faez Rahim

  Department of Electrical Engineering, Sharif University of Technology

• Hoseini Hamid

  Department of Electrical Engineering, Arak Branch, Islamic Azad University

• Ohadi Sahar

  Department of Electrical Engineering, Arak Branch, Islamic Azad University

関連論文

• A small signal circuit model of two mode InAs/GaAs quantum dot laser
• Design and simulation of a high power single mode 1550nm InGaAsP VCSELs
• Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

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