Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances
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概要
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Transient behavior in switching operation of junction field-effect transistors (JFETs) is affected by their intrinsic parasitic capacitances. This paper focuses on the switching operation of lateral-type and vertical-type SiC JFETs with considering the charge/discharge behavior of parasitic capacitances in the device. Their device structure decides the voltage dependency of the capacitance characteristics, so that the C-V characteristics governs their switching behavior.
著者
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Funaki Tsuyoshi
Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering
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Phankong Nathabhat
Kyoto University, Dept. of Electrical Eng., Graduate School of Engineering
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Hikihara Takashi
Kyoto University, Dept. of Electrical Eng., Graduate School of Engineering
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