Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET
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概要
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The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering the internal device structure. The results give us a clue to understand the switching dynamics of the power MOSFET.
著者
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Funaki Tsuyoshi
Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering
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Phankong Nathabhat
Kyoto University, Dept. of Electrical Eng., Graduate School of Engineering
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Hikihara Takashi
Kyoto University, Dept. of Electrical Eng., Graduate School of Engineering
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