Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering

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概要

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• Erbium-doped tantalum oxide films were prepared by radio-frequency magnetron sputtering. Visible light emission was observed from the films after annealing. We obtained PL peaks at 550 and 670nm. The effects of erbium concentration, annealing temperature, and annealing time on the light-emitting properties of the films are discussed. The strongest intensities of the 550 and 670nm peaks were observed from the samples with 0.96 and 0.63mol% erbium concentrations after annealing at 900°C for 20min, respectively.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Miura Kenta

  Graduate School Of Engineering Gunma University

• Hanaizumi Osamu

  Graduate School Of Engineering Gunma University

• Singh Mayank

  Graduate School of Engineering, Gunma University

• Fusegi Genjoh

  Graduate School of Engineering, Gunma University

• Kano Kazusa

  Graduate School of Engineering, Gunma University

• Bange Jaspal

  Advance Technology Research Center, Gunma University

関連論文

• Observation of Blue-Light Emission from Tantalum Oxide Films Deposited by Radio-Frequency Magnetron Sputtering
• Modified FDTD method for triangular lattice photonic crystals (光エレクトロニクス)
• Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering

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