Silicon Dioxide Film Deposition by Afterglow-Plasma-Enhanced Chemical Vapor Deposition using Triethoxysilane and Tetraethoxysilane
スポンサーリンク
概要
- 論文の詳細を見る
Silicon dioxide (SiO2) films were deposited by afterglow-plasma-enhanced CVD using triethoxysilane (TRIES) and tetraethoxysilane (TEOS) as source materials. TRIES has approximately four times higher vapor pressure than TEOS. The growth rate using TRIES was approximately twice as high as that using TEOS under the same operating conditions. The step coverage of film grown by TRIES was better than that by TEOS under a wide range of operating conditions. These results suggest that TRIES is a good candidate for SiO2 films.
- 九州大学大学院総合理工学府の論文
- 2003-06-00
九州大学大学院総合理工学府 | 論文
- DNLS方程式を用いた平行伝播アルフヴェン波動乱流の非線形発展
- Laser Thomson Scattering and Optical Emission Studies of PDP Micro-Discharge Plasmas
- Investigation of 915 MHz ECR Plasma Parameters with SiH4/H2 Mixtures
- 日本沿岸域におけるM2潮汐振幅の季節変動および経年変動
- Silicon Dioxide Film Deposition by Afterglow-Plasma-Enhanced Chemical Vapor Deposition using Triethoxysilane and Tetraethoxysilane