Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175 °C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23 °C. The lower temperature samples showed an increased degree of spin polarization of 18%–20% which translates to 36%–40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%–45% in an Fe spin injector itself. ©2004 American Vacuum Society.
- American Vacuum Societyの論文
American Vacuum Society | 論文
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode
- Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field
- Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection
- Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy