R.F.リアクティブ・スパッタ法によるTa-Ti-O系混合誘電体薄膜

概要

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Mixed dielectric thin films of a Ta-Ti-O system were prepared by R. F. reactive sputtering from the composite targets, which were given several different area ratios, in the sputtering gas of argon-oxygen（15%）mixture.　　　The value of the dielectric constant was varied almost linearly from 30 to 70 with increased Ti area ratios、but that of dielectric loss remained less than 0.04. The addition of a Ta-O system into the Ti−O system markedly improved frequency characteristics of the dielectric constant and loss, and also decreased　the　magnitude of　the leakage current.　　　The structural properties were　investigated by electron diffraction and the results showed that the Ta-Ti-O system included only an amorphous Ti-O system and a polycrystalline Ta-O system.　　　The investigation of the conduction through this dielectric thin films showed that the mechanism was due to the Pool-Frenkel effect.
北見工業大学の論文