27aWD-7 Dabstraction by H on D/Si(111)
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概要
- 論文の詳細を見る
- 一般社団法人日本物理学会の論文
- 2002-03-01
著者
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Rahman F.
Kyushu Institute of Technology
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Khanom F.
Kyushu Institute of Technology
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Ohnishi N.
Kyushu Institute of Technology
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Namiki A.
Kyushu Institute of Technology
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Aoki A.
Kyushu Institute of Technology
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Inanaga S.
Kyushu Institute of Technology
関連論文
- 28pPSB-39 H-induced D abstraction on Si : Direct evidence for β_2 channel related process
- 27aWD-7 Dabstraction by H on D/Si(111)
- 27aWD-6 Formation of D_2O and D_2 by oxygen atoms on D/Si(111) surfaces.