28pPSB-39 H-induced D abstraction on Si : Direct evidence for β_2 channel related process
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2003-03-06
著者
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Rahman F.
Dept. Of Electrical Engineering Kyushu Institute Of Technology
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Khanom F.
Dept. Of Electrical Engineering Kyushu Institute Of Technology
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Kiyonaga T.
Dept. of Electrical Engineering, Kyushu Institute of Technology
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Namiki A.
Dept. of Electrical Engineering, Kyushu Institute of Technology
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Rahman F.
Kyushu Institute of Technology
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Kuroda M.
Kyushu Institute of Technology
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Khanom F.
Kyushu Institute of Technology
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Ohnishi N.
Kyushu Institute of Technology
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Kiyonaga T.
Kyushu Institute of Technology
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Namiki A.
Kyushu Institute of Technology
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Kiyonaga T.
Dept. Of Electrical Engineering Kyushu Institute Of Technology
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Namiki A.
Dept. Of Electrical Engineering Kyushu Institute Of Technology
関連論文
- 28pYB-1 Modulated beam study of adsorption-induced-desorption reaction, H+D/Si(100)→D_2(Surface science and photoemission spectroscopy)
- 28pYB-1 Modulated beam study of adsorption-induced-desorption reaction, H + D/Si(100)→D_2
- 28pPSB-39 H-induced D abstraction on Si : Direct evidence for β_2 channel related process
- 27pPSA-33 Angular distribution of H-induced HD and D_2 on Si(100)
- 27aWD-7 Dabstraction by H on D/Si(111)
- 27aWD-6 Formation of D_2O and D_2 by oxygen atoms on D/Si(111) surfaces.