欠陥対消滅が誘起する液晶流動 : 第2報,速度分布の数値計算(流体工学,流体機械)

概要

論文の詳細を見る
As the second report of liquid crystal flow induced by annihilation of a pair of defects, we have numerically investigated both the transient behaviors of two defects with different structures and the velocity field, and estimated the magnitude of the induced velocity, using the Doi theory with the Marrucci-Greco potential. A defect with negative strength moves faster than that with positive strength. The effect of the long range order of the molecular orientation field on the annihilation time is considerably large, and the annihilation time is reduced with the increase in the magnitude of the long range order. It is clarified that flows are induced during the annihilation of a pair of defects and that several vortices are generated in the vicinity of defects. The maximum velocity is predicted spatially between the two defects just after the annihilation. In the present simulation, the maximum of the induced velocity reaches an order of 10μm/s. The induced velocity becomes large with the increase in the values of the long range order and the nematic potential strength.
2010-01-25