Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation(Electronic Components)
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概要
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In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.
- 社団法人電子情報通信学会の論文
- 2007-01-01
著者
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Yin Wen-yan
School Of Electronic Information And Electrical Engineering Shanghai Jiao Tong University
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Xu Jianfeng
School Of Electronic Information And Electrical Engineering Shanghai Jiao Tong University
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Xu Jianfeng
Center For Cancer Genomics Wake Forest University School Of Medicine
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YIN Wen-Yan
Center for Microwave and RF Technologies, School of Electronic Information and Electorical Engineeri
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MAO Junfa
Center for Microwave and RF Technologies, School of Electronic Information and Electorical Engineeri
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LI Le-Wei
Center for Microwave and Radio Frequency, Department of Electrical and Computer Engineering, The Nat
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Li Le-wei
Department Of Electrical And Computer Engineering The National University Of Singapore
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Mao Junfa
School Of Electronic Information And Electrical Engineering Shanghai Jiao Tong University
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