Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique

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概要

• 論文の詳細を見る
• 関西大学の論文

著者

• Sato Shingo

  Senior Member Ieee

• Omura Yasuhisa

  Senior Member Ieee

• Komiya Kenji

  Senior Member Ieee

• Komiya Kennji

  Fellow, IEEE

• Bresson Nicolas

  Fellow, IEEE

• Sato Shingo

  Fellow, IEEE

• Cristoloveanu Sorin

  Fellow, IEEE

• Bresson Nicolas

  Senior Member, IEEE

• Bresson Nicolas

  Senior Member Ieee

• Cristoloveanu Sorin

  Fellow Ieee

• Sato Shingo

  Senior Member, IEEE

関連論文

• Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique
• Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors
• Engineering S/D Diffusion for Sub-100-nm Channel SOI MOSFETs
• Design Guideline for Minimum Channel Length in Silicon-on-Insulator (SOI) MOSFET
• Study on Self-Collimated Light-Focusing Device Using the 2-D Photonic Crystal With a Parallelogram Lattice
• Theoretical Consideration on Influences of Cavity or Pillar Shape on Band Structures of Silicon-Based Photonic Crystals
• Feasibility Study on Self-Collimated Light-Focusing Device Using 2-D Photonic Crystal with a Parallelogram Lattice

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