Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors
スポンサーリンク
概要
著者
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Sato Shingo
Senior Member Ieee
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Omura Yasuhisa
Senior Member Ieee
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Komiya Kenji
Senior Member Ieee
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Cristoloveanu Sorin
Fellow, IEEE
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Bresson Nicolas
Senior Member, IEEE
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Bresson Nicolas
Senior Member Ieee
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Cristoloveanu Sorin
Fellow Ieee
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Sato Shingo
Senior Member, IEEE
関連論文
- Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique
- Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors
- Engineering S/D Diffusion for Sub-100-nm Channel SOI MOSFETs
- Design Guideline for Minimum Channel Length in Silicon-on-Insulator (SOI) MOSFET
- Study on Self-Collimated Light-Focusing Device Using the 2-D Photonic Crystal With a Parallelogram Lattice
- Theoretical Consideration on Influences of Cavity or Pillar Shape on Band Structures of Silicon-Based Photonic Crystals
- Feasibility Study on Self-Collimated Light-Focusing Device Using 2-D Photonic Crystal with a Parallelogram Lattice