Estimating performance of power conditioner for photovoltaic under development of SiC devices (電子デバイス)
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we estimate the performance of power conditioner for photovoltaic under development of SiC devices. Development of SiC power-switching devices involves improvement of specific on-resistance, improvement of current density and increase of junction temperature. These developments result in change of the power-switching devices characteristic parameters. According to these improvements, the power loss, efficiency and power density of power conditioner are calculated. The calculation results are employed to estimate the performance of power conditioner under development of SiC.
- 2008-10-16
著者
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Hayashi Yusuke
National Institute Of Advanced Industrial Science And Technology (aist)
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YAMAGUCHI Hiroshi
National Institute of Radiological Sciences
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Simanjorang Rejeki
National Institute Of Advanced Industrial Science And Technology (aist)
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YATSUO Tsutomo
National Institute of Advanced Industrial Science and Technology (AIST)
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Yamaguchi Hiroshi
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamaguchi Hiroshi
National Institute Of Advanced Industrial Science & Technology
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