ゾルーゲル法で作製したSnO_2をn型とするヘテロ接合半導体ガスセンサ

概要

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Tin oxide thin layer as n type semiconductor was prepared by Sol-Gel method. The thickness of tin oxide layer was about 1 μ. m.SmCoO_3 and GdCoO_3 as p type semiconductor were controlled valence used Ca (2%,4%,8%). Sensor element of (Gd:Ca2%)CoO_3 / SnO_2 showed remarkable rectification. In measurements used alternating current 1KHz, (Gd:Ca4%)CoO_3/SnO_2 sensor element showed sensitivity( 1.75) for Hydrogen gas at 200℃ and sensitivity(2.33) for Ethanol at 300℃. (Gd:Ca2%,8%)CoO_3/SnO_2 element showed partially rectification in low temperature range. Sensor element of GdCo_3/SnO_2 showed partially rectification in high temperature range.(Gd:Ca8%)CoO_3/SnO_2 element showed sensitivity (4.5) for hydrogen gas and 3.6 for ethanol.There was not the clear connection with rectification of sensors and sensitivity in measurements used alternating current 1KHz.
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