IGTC-61 Creep Fracture Behavior of Gas Pressure Sintered Silicon Nitride by X-ray CT(Session C-2 EVALUATION OF CERAMIC MATERIALS)
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概要
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Tensile creep fracture behavior of fine grain in situ reinforced gas pressure sintered silicon nitride was studied at 1350-1400℃ in air by means of X-ray computer tomography, optical and scanning electron microscopy. Creep curves showed quasi-plastic deformation (elongation up to 25%) characterized by prolonged tertiary-like creep and accompanied by intensive formation of large voids inside the thick oxide layers. The proposed model of the creep deformation and rupture, accompanied by oxidation and void formation was based on the assumption of high "brittleness" of oxide layer and relatively "plastic" basic material. Tertiary creep was explained by the reduction of cross section of specimen due to oxidation and void formation. Successive X-ray CT of specimens showed to be useful for non-destructive detection of large creep defects and oxidation in silicon nitride.
- 公益社団法人日本ガスタービン学会の論文
著者
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IKEDA Y.
Japan Atomic Energy Research Institute
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Usami H.
Dept. Of Mechanical Eng. Fac. Of Sci. & Technol. Meijo University
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Lofaj F.
Japan Fine Ceramics Center
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Usami H.
Meijo University
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Mizuta Y.
Japan Fine Ceramics Center
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Kawamoto H.
Japan Fine Ceramics Center
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Mizuta Y.
Research And Development Laboratory Japan Fine Ceramics Center
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- IGTC-61 Creep Fracture Behavior of Gas Pressure Sintered Silicon Nitride by X-ray CT(Session C-2 EVALUATION OF CERAMIC MATERIALS)