シリコン酸化膜のウェットエッチング速度

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Abstract : The experimental studies were carried out extensively on the relationships between the etching velocity of silicon oxide film and the concentration of each ion species contained in the etching solutions. From our studies, the following results were obtained. It was found that the etching reaction of silicon oxide film was controlled by the chemical species of H~+, HF_2~ and HF. And it was also shown that the measured values were well correlated by Eq.(18) which was derived by assuming the reaction model of prigogine on the reaction mechanism. The parameters of Eq.(18) were decided by the esxperimental values, and the empirical equation (28) of the etching rate of thermal oxidation film was proposed by considering the temperature dependency.
2008-02-15