光散乱トモグラフィによる単結晶の欠陥評価

概要

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Defects in several compound semiconducting single crystals are evaluated by using the light scattering tomography. The dislocations in ZnSe and ZnO single crystals are observed by decorating them with precipitate, which were generated by heat treatment. We obtain three dimensional views of linear and curved dislocations in ZnSe crystals. Linear dislocations are detected for the first time by several annealing. Micropipes along growth direction are also found by this method.
福井工業大学の論文