Nitrogen-Doped p-Type ZnO Layers Prepared with H_2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy

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概要

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• Nitrogen (N) doping in ZnO is studied to realize reproducible p-type conductivity. Undoped ZnO layers prepared on a-face of sapphire substrates with H_2O vapor-assisted growth showed n-type conductivity. However, N-doped ZnO (ZnO:N) layers grown in the similar manner showed the type conversion to p-type conductivity. As-grown p-type ZnO:N layers showed low net acceptor concentrations (N_A-N_D) of 〜 10^<14> cm^<-3>l, but thermal annealing of the N-doped ZnO samples as well as the optimization of growth parameters increased the N_A-N_D up to 〜 5×10^<16> cm^<-3>. Photoluminescence measurements showed consistent spectra with the electrical properties by a clear conversion from neutral donor-bound exciton emission in n-ZnO to neutral acceptor-bound exciton emission in the p-ZnO layers.

• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Kumano Hidekazu

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

• Ashrafi Almamun

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

• Ashrafi A.

  Laboratory For Photophysics Photodynamics Research Center Riken

• Suemune Ikuo

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

• TANAKA Satoru

  Laboratory of Optoelectronics, Research Institute for Electronic Science, Hokkaido University

• Tanaka S

  Hokkaido Univ. Sapporo Jpn

• Tanaka Satoru

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

関連論文

• H_2O-Vapor-Activated ZnO Growth on a Face Sapphire Substrates by Metalorganic Molecular-Beam Epitaxy
• Nitrogen-Doped p-Type ZnO Layers Prepared with H_2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy
• High-Quality ZnO Layers Grown on 6H-SiC Substrates by Metalorganic Chemical Vapor Deposition

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