H_2O-Vapor-Activated ZnO Growth on a Face Sapphire Substrates by Metalorganic Molecular-Beam Epitaxy

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概要

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• ZnO layers have been grown on a-face sapphire substrates using H_20 vapor and O_2 plasma as oxygen sources. The growth rate of H_20-vapor-assisted growth of ZnO (v-ZnO) is 〜3 times higher than that of plasma-assisted growth of ZnO (p-ZnO) for the same DEZn flux. This report addresses the higher growth activation of ZnO layers with H_20 vapor than with 02 plasma at the same substrate temperature. A sharp and intense photolurninescence (PL) spectrum is observed in v-ZnO at the neutral donor-bound exciton energy of 3.368 eV at 16 K. The PL excitation spectrum measurement revealed A and B free exciton energies of 3.382 and 3.388eV, respectively. On the other hand, the p-ZnO showed the band-edge emission energy of 3.373 eV but with a very weak PL intensity and broader half width. The PL intensity from v-ZnO was 〜10^4 times brighter than that of p-ZnO and the integrated PL intensity measured at room temperature was kept to 〜 1/8 of that measured at 16 K.

• 社団法人応用物理学会の論文
• 2002-05-15

著者

• Kumano Hidekazu

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

• Ashrafi A.b.m.almamun

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

• Ashrafi A.

  Laboratory For Photophysics Photodynamics Research Center Riken

• Suemune Ikuo

  Laboratory Of Optoelectronics Research Institute For Electronic Science Hokkaido University

関連論文

• H_2O-Vapor-Activated ZnO Growth on a Face Sapphire Substrates by Metalorganic Molecular-Beam Epitaxy
• Nitrogen-Doped p-Type ZnO Layers Prepared with H_2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy
• High-Quality ZnO Layers Grown on 6H-SiC Substrates by Metalorganic Chemical Vapor Deposition

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