Measurement of Diffusion Coefficient in Liquid Metal under Static Magnetic Field : Cross-Disciplinary Areas
スポンサーリンク
概要
- 論文の詳細を見る
Temperature dependence of interdiffusion coefficient of In-Sn was measured by a capillary method under a static magnetic field. The obtained diffusion coefficient data agreed well with data measured in microgravity environment at a lower temperature range. The application of static magnetic field could be a good substitute method for accurate measurement of diffusion coefficients in substitution for utilization of the microgravity environment.
- 社団法人応用物理学会の論文
- 2002-07-01
著者
-
Inatomi Yuko
Department Of Material Science Faculty Of Engineering University Of Tokyo
-
Kuribayashi Kazuhiko
Department Of Metallurgy And Materials Science Facullty Of Engineering The University Of Tokyo
-
Kuribayashi Kazuhiro
Department Of Material Science Faculty Of Engineering University Of Tokyo
-
Kuribayashi Kazuhiro
Department Of Biology Faculty Of Science Kanazawa University:(present)kyoto Biological Res. Lab. Bio
-
Miyake Takuma
Department Of Material Science Faculty Of Engineering University Of Tokyo
-
Kuribayashi Kazuhiko
Department of Material Science, Faculty of Engineering, University of Tokyo
-
Miyake Takuma
Department of Electrical Engineering, Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
関連論文
- Angular Correlation Apparatus of Positron Annihilation and Application to the Study on Copper Alloys
- Novel Light-Dark Change of Proline Levels in Halophyta (Mesembryanthemum crystallinum L.) and Glycophytes (Hordeum vulgare L. and Triticum aestuvum L.) Leaves and Roots under Salt Stress : ENVIRONMENTAL AND STRESS RESPONSES
- The Effect of Ordering AuCu_3 on Positron Annihilation
- Measurement of Diffusion Coefficient in Liquid Metal under Static Magnetic Field : Cross-Disciplinary Areas
- Maximum Output Power Control Using Short-Circuit Current and Open-Circuit Voltage of a Solar Panel
- Entropy-Undercooling Regime Criterion for Metastable Phase Formation in Oxide Material
- Influence of Morphological Transition on Crystallization Process in Si