Investigation of low cost contact formation for crystalline Si solar cells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• There are typically applied on both rear and front sides of metal contacts to the solar cell. Metallization of front grid line is an important factor of solar cells. Accordingly, the front contact formation is particularly sensitive to many parameters. Metallization on Si solar cells requires forming a contact without penetrating the emitter too deeply; this is largely dependent on the glass frit used in the paste. In this paper, the surface penetration of screen printed Ag paste contacts for silicon solar cells. It was found that penetration depth of Ag paste conductor depend on junction depth by diffusion process, as below 0.5μm on 1.0〜1.2μm junction depth thought SEM-EDX analysis and conversion efficiency was 9.4% by solar simulator at AM 1.5 (25℃).

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Lee Eunjoo

  Strategic Energy Research Institute Dept. Electronic Engineering Sejong University

• Lee Soohong

  Strategic Energy Research Institute Dept. Electronic Engineering Sejong University

• Choi Junyoung

  Strategic Energy Research Institute Engineer, Sejong Univ

• Kim Bumho

  Strategic Energy Research Institute Engineer, Sejong Univ

• Choi Junyoung

  Strategic Energy Research Institute Dept. Electronic Engineering Sejong University

• Kim Bumho

  Strategic Energy Research Institute Dept. Electronic Engineering Sejong University

関連論文

• Investigation of low cost contact formation for crystalline Si solar cells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Study of Ni/Cu plating for high-efficiency Crystalline silicon solar cells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Investigation of low cost contact formation for crystalline Si solar cells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Study of Ni/Cu plating for high-efficiency Crystalline silicon solar cells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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