A wideband power efficient SiGe BiCMOS medium power amplifier (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• In this paper, a wideband 2.2GHz-4.9GHz Medium Power Amplifier has been designed and fabricated using 0.8um SiGe BiCMOS process technology. Passive elements such like parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage design with all matching components and bias circuits integrated on chip. A P1dB of 17.7dBm has been measured with a power gain of 8.7dB at 3.4GHz with a total current consumption of 30mA from a 3 V supply voltage at 25℃ degree. The measured 3dB bandwidth is 2.7GHz and the maximum PAE is 41%, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of 1.7mm X 0.8mm.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Lee Sang-heung

  Sige Circuit Team Rf Circuit Group Iccl Etri

• Bae Hyun-cheol

  Sige Circuit Team Rf Circuit Group Iccl Etri

• Kim Sang-hoon

  Sige Circuit Team Rf Circuit Group Iccl Etri

• Lee Ja-Yol

  SiGe Circuit Team, RF Circuit Group, ICCL, ETRI

• Lee Ja-yol

  Sige Circuit Team Rf Circuit Group Iccl Etri

関連論文

• Enhanced f_ and low base resistance in Ni silicided SiGe HBT
• A wideband power efficient SiGe BiCMOS medium power amplifier (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• A wideband power efficient SiGe BiCMOS medium power amplifier (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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