Enhanced f_<max> and low base resistance in Ni silicided SiGe HBT

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概要

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2005-09-13

著者

Lee Sang-heung
Sige Circuit Team Rf Circuit Group Iccl Etri
Kim Bo-woo
Sige Device Team High Speed Ic Research Department Electronics And Telecommunications Research Insti
Bae Hyun-cheol
Sige Circuit Team Rf Circuit Group Iccl Etri
Kim Sang-hoon
Sige Circuit Team Rf Circuit Group Iccl Etri
SONG Young-Joo
SiGe Device Team, High Speed IC Research Department Electronics and Telecommunications Research Inst
YOO Seong-Wook
SiGe Device Team, High Speed IC Research Department Electronics and Telecommunications Research Inst
Yoo Seong-wook
Sige Device Team High Speed Ic Research Department Electronics And Telecommunications Research Insti
Song Young-joo
Sige Device Team High Speed Ic Research Department Electronics And Telecommunications Research Insti

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