Formation of NdSi_2 Phase by High-Current Nd-Ion Implantation
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概要
- 論文の詳細を見る
Continuous NdSi_2 phase layers could be obtained by high-current Nd-ion implantation into Si using a metal vapor vacuum arc ion source and the formation temperature could be relatively low in the range from 165 to 320℃. Furthermore, the surface morphology of the Nd-ion implanted surface varied with the implantation parameters. The formation mechanism of the NdSi_2 phase as well as its continuous layer is also discussed in tenus of the temperature rise caused by ion beam heating and variations of the ion dose in the Nd-ion implantation process.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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Liu Bai
Laboratory Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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Cheng Xiang
Laboratory Of Cardiovascular Immunology Institute Of Cardiology Union Hospital Tongji Medical Colleg
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Cheng Xiang
Laboratory Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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Wang Run
Laboratory Of Advanced Materials Department Of Materials Science And Engineering Tsinghua University
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