The Role of the Grain Boundary on the Room Temperature Resistivity of Pb(Fe_<1/2>Nb_<1/2>)O_3

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概要

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• The role of the grain boundary on the room temperature resistivity of Pb(Fe_<1/2>Nb_<1/2>)O_3 (PEN) was investigated using parameters such as temperature dependence of resistivity, complex impedance spectroscopy and X-ray photoelectron spectroscopy. The low resistivity of PEN has been reported to be due to the electron hopping between Fe^<2+> and Fe^<3+> driven by the reduction of PEN. However a reconsideration of the reduction equilibrium constant (K_<Re>) revealed that this theory could not fully explain the effect of the sintering temperature on the room temperature resistivity. The role of the grain boundary on the total resistivity was introduced in order to account for this behavior, which was confirmed by complex impedence spectroscopy. Furthermore, the annealing data and X-ray photoelectron spectroscopy (XPS) results showed that the grain boundary properties were irreversibly changed at 1423 K, which appeared to be due to Pb volatilization.

• 社団法人応用物理学会の論文
• 2002-08-15

著者

• KIM Hwan

  School of Materials Science and Engineering, Seoul National University

• Lee Kwang-ho

  School Of Materials Science And Engineering Seoul National University

• Lee Kwang-ho

  School Of Materials Science & Engineering Seoul National University

• LEE Sang-Sop

  School of Materials Science and Engineering, Seoul National University

• Lee Sang-sop

  School Of Materials Science And Engineering Seoul National University

• Kim Hwan

  School Of Materials Sciecne And Engineering Seoul National University

• Lee Sang-Bop

  School of Materials Science and Engineering, Seoul National University

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