Investigation of the Dopant Segregation Phenomenon in Nb-doped BaTiO_3 Positive-Temperature-Coefficient-Resistor by Impedance Analysis

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概要

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• We sought evidence of the dopant segregation phenomenon and the formation of a dopant-segregation-induced insulating layer in Nb-doped BaTiO_3, by impedance and modulus analyses. In a 0.05 mol% Nb-doped specimen in which dopant segregation is not expected to occur, impedance and modulus data over the range of 30-400℃ can be explained by the conventional positive-temperature-coefficient-resistor (PTCR) equivalent circuit of grain resistance (R) and grain boundary resistance and capacitance (C). In a 0.4 mol% Nb-doped specimen, however, impedance and modulus data can be described by introducing another third RC component in addition to the grain and grain boundary component. This RC component is assumed to have originated from the dopant segregation layer. Above 350℃, this RC component associated with segregation layer begins to disappear. This phenomenon can be explained by the Fermi level change and the valence change of the titanium vacancy in the dopant segregation layer with change in temperature.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• KIM Hwan

  School of Materials Science and Engineering, Seoul National University

• Yoon Seok

  School Of Materials Science & Engineering Seoul National University

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• Investigation of the Dopant Segregation Phenomenon in Nb-doped BaTiO_3 Positive-Temperature-Coefficient-Resistor by Impedance Analysis

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