X-Ray Absorption Fine Structure Measurement Using a Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in the 〜nm Region

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概要

• 論文の詳細を見る

• For site-selective analysis of trap centers in a single nano-structure of a semiconductor, a new X-ray absorption spectroscopy technique using scanning probe detection of capacitance (scanning capacitance microscope-X-ray absorption fine structure; SCM-XAFS method) is proposed. Since capacitance is sensitive to localized electrons, X-ray induced photoionization of a trap center can be detected by capacitance change of the diode structure. The X-ray photon energy dependence of the capacitance involved in a point contact diode of a GaAs sample and Au-coated Si tip of SCM indicates XAFS spectra of the trap centers in the local region. Several resonant X-ray absorption peaks with different sample bias voltage dependences are found. The correspondence of the Fermi level to the specific trap level enhances the SCM-XAFS signal from the trap center, indicating that the site-selective observation of the trap center can be realized by bias control.

• 社団法人応用物理学会の論文
• 2002-06-30

著者

• Ishii M

  Japan Synchrotron Radiation Research Institute (jasri)

• Ishii Masashi

  Japan Synchrotron Radiation Research Institute (jasri)

• Masashi Ishii

  Japan Synchrotron Radiation Research Instirute (jasri)

• Ishii Masashi

  Japan Synchrotron Radiation Research Instirute (JASRI)

関連論文

• Capacitance X-Ray Absorption Fine Structure Method using Dopant Photoionization : X-Ray Absorption Spectroscopy of 〜nm Thickness Channel in Semiconductor Devices : Instrumentation, Measurement, and Fabrication Technology
• X-Ray Absorption Fine Structure Measurement Using a Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in the 〜nm Region

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