Capacitance X-Ray Absorption Fine Structure Method using Dopant Photoionization : X-Ray Absorption Spectroscopy of 〜nm Thickness Channel in Semiconductor Devices : Instrumentation, Measurement, and Fabrication Technology

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概要

• 論文の詳細を見る

• A capacitance X-ray absorption fine structure (capacitance XAFS) method which implements the X-ray induced photoionization of the dopant is proposed for the local structure analysis of elecincally active regions in semiconductor devices. In a semiconductor device, the X-ray absorption spectrum of a channel results from capacitance changes due to inner-shell absorption in a 〜nm thickness region below the depletion layer in spite of the high transmittance inherent in hard X-rays. The absorption signal of the proposed capacitance XAFS measurement using a Schottky barrier gate is shown to reproduce the depth modulation of the X-ray intensity. This experimental finding can be explained by the Schottky barrier theory considering the photoionization of the dopant in the 〜nm thickness channel. Accordingly, this method enables a channel to be observed with 〜nm depth resolution.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Ishii M

  Japan Synchrotron Radiation Research Institute (jasri)

• Ishii Masashi

  Japan Synchrotron Radiation Research Institute (jasri)

• Masashi Ishii

  Japan Synchrotron Radiation Research Instirute (jasri)

• Ishii Masashi

  Japan Synchrotron Radiation Research Instirute (JASRI)

関連論文

• Capacitance X-Ray Absorption Fine Structure Method using Dopant Photoionization : X-Ray Absorption Spectroscopy of 〜nm Thickness Channel in Semiconductor Devices : Instrumentation, Measurement, and Fabrication Technology
• X-Ray Absorption Fine Structure Measurement Using a Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in the 〜nm Region

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